Journal de Physique IV

Application of HRTEM to studies of electronic structure and atomic configuration of interface in SiC/SiC composites

T. Shibayama, G.W. He, Heishichiro Takahashi and A. Kohyama

J. Phys. IV France, 10 PR6 (2000) Pr6-97-Pr6-103

DOI: 10.1051/jp4:2000617

T. Shibayama

G.W. He

Heishichiro Takahashi

A. Kohyama

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