Journal de Physique IV

A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

W.C. Liu, S.Y. Cheng, H.J. Pan, J.Y. Chen, W.C. Wang, S.C. Feng and K.H. Yu

J. Phys. IV France, 09 PR8 (1999) Pr8-1155-Pr8-1161

DOI: 10.1051/jp4:19998144

W.C. Liu

S.Y. Cheng

H.J. Pan

J.Y. Chen

W.C. Wang

S.C. Feng

K.H. Yu

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