Journal de Physique IV

Nucleation behavior during the first stages of SiC growth on different substrates

E. Hurtós, J. Rodríguez-Viejo, M.T. Clavaguera-Mora and K. Zekentes

J. Phys. IV France, 09 PR8 (1999) Pr8-1069-Pr8-1074

DOI: 10.1051/jp4:19998133

E. Hurtós

J. Rodríguez-Viejo

M.T. Clavaguera-Mora

K. Zekentes

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