Si1-x Gex structures fabricated by focused ion beam implantation Th. Ganetsos, D. Tsamakis, D. Panknin, G.L.R. Mair, J. Teichert, L. Bischoff and C. Aidinis J. Phys. IV France, 08 PR3 (1998) Pr3-109-Pr3-112 DOI: 10.1051/jp4:1998325