Journal de Physique IV

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The drain-bias-variable characteristics of exponent γon l/f^γ noise in DDD n-MOSFETs at 77 K and 300 K

S.-L. Chen and S.-H. Chen

J. Phys. IV France, 08 PR3 (1998) Pr3-33-Pr3-35

DOI: 10.1051/jp4:1998308

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