Journal de Physique IV

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Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs

S.H. Renn, C. Raynaud and F. Balestra

J. Phys. IV France, 08 PR3 (1998) Pr3-13-Pr3-16

DOI: 10.1051/jp4:1998303

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