Journal de Physique IV

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Fabrication and Characterization of Single-Electron Transistors Based on Al/AlO_x/Al and Nb/AlO_x/Nb Tunnel Junctions

K. Blüthner, M. Götz, W. Krech, H. Mühlig, Th. Wagner, H.-J. Fuchs, D. Schelle, L. Fritzsch, B. Nachtmann and A. Nowack

J. Phys. IV France, 06 C3 (1996) C3-163-C3-167

DOI: 10.1051/jp4:1996325

K. Blüthner

M. Götz

W. Krech

H. Mühlig

Th. Wagner

H.-J. Fuchs

D. Schelle

L. Fritzsch

B. Nachtmann

A. Nowack

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