Journal de Physique IV

Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors

T.T. Mnatsakanov, L.I. Pomortseva and V.B. Shuman

J. Phys. IV France, 06 C3 (1996) C3-81-C3-86

DOI: 10.1051/jp4:1996312

T.T. Mnatsakanov

L.I. Pomortseva

V.B. Shuman

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)