Journal de Physique IV

Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

A.S. Nicolett, J.A. Martino, E. Simoen and C. Claeys

J. Phys. IV France, 06 C3 (1996) C3-55-C3-59

DOI: 10.1051/jp4:1996308

A.S. Nicolett

J.A. Martino

E. Simoen

C. Claeys

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