Journal de Physique IV

Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs

J.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller

J. Phys. IV France, 06 C3 (1996) C3-13-C3-18

DOI: 10.1051/jp4:1996302

J.B. Roldán

F. Gámiz

J.A. López-Villanueva

J.E. Carceller

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