Journal de Physique IV

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Tunable infrared photoemission sensor on silicon using SiGe/Si and silicide/Si epitaxial layers

I. Sagnes, C. Renard and P.A. Badoz

J. Phys. IV France, 04 C6 (1994) C6-139-C6-144

DOI: 10.1051/jp4:1994622

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