Journal de Physique IV

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Measurement of the bandgap narrowing in the base of Si homojunction and Si/Si_1-xGe_x heterojunction bipolar transistors from the temperature dependence of the collector current

P. Ashburn, A. Nouailhat and A. Chantre

J. Phys. IV France, 04 C6 (1994) C6-123-C6-126

DOI: 10.1051/jp4:1994619

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