Journal de Physique IV

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Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K

E.A. Gutiérrez-D, L. Deferm and G. Declerck

J. Phys. IV France, 04 C6 (1994) C6-31-C6-36

DOI: 10.1051/jp4:1994605

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