Journal de Physique IV

CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS

U. GNAUERT, J. KRONEWITZ, M. SEIBT and W. SCHRÖTER

J. Phys. IV France, 01 C6 (1991) C6-335-C6-336

DOI: 10.1051/jp4:1991649

U. GNAUERT

J. KRONEWITZ

M. SEIBT

W. SCHRÖTER

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