Journal de Physique IV

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ELECTRICAL ACTIVITY OF Al DOPED SILICON ∑ 9 BICRYSTAL BY S.T.E.B.I.C.

T. BENABBAS and J.-Y. LAVAL

J. Phys. IV France, 01 C6 (1991) C6-231-C6-236

DOI: 10.1051/jp4:1991636

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