Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Growth of InP in a Novel Remote-Plasma MOCVD Apparatus : an Approach to Improve Process and Material Properties

G. Bruno, P. Capezzuto, M. Losurdo

J. Phys. IV France, 05 C5 (1995) C5-481-C5-488

DOI: https://doi.org/10.1051/jphyscol:1995555

PDF (347.9 KB)

This article has been cited by the following article(s):

Homoepitaxial growth of device-grade GaAs using low-pressure remote plasma CVD

Lise Watrin, François Silva, Ludovic Largeau, Nathaniel Findling, Mirella Al Katrib, Muriel Bouttemy, Kassiogé Dembélé, Nicolas Vaissière, Cyril Jadaud, Pavel Bulkin, Jean-Charles Vanel, Erik V. Johnson, Karim Ouaras and Pere Roca i Cabarrocas
Materials Science in Semiconductor Processing 186 109069 (2025)
https://doi.org/10.1016/j.mssp.2024.109069

Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD

Lise Watrin, François Silva, Cyril Jadaud, Pavel Bulkin, Jean-Charles Vanel, Dominique Muller, Erik V Johnson, Karim Ouaras and Pere Roca I Cabarrocas
Journal of Physics D: Applied Physics 57 (31) 315106 (2024)
https://doi.org/10.1088/1361-6463/ad436c