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Cited article:

Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Elias Semlali, Geoffrey Avit, Yamina André, Evelyne Gil, Andriy Moskalenko, Philip Shields, Vladimir G Dubrovskii, Andrea Cattoni, Jean-Christophe Harmand and Agnès Trassoudaine
Nanotechnology 35 (26) 265604 (2024)
https://doi.org/10.1088/1361-6528/ad3741

Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Haochen Zhang, Yao Chen, Yue Sun, et al.
Applied Physics Letters 122 (17) (2023)
https://doi.org/10.1063/5.0146447

Competitive Hydrogen Migration in Silicon Nitride Nanoclusters: Reaction Kinetics Generalized from Supervised Machine Learning

Yeseul Choi and Andrew J. Adamczyk
The Journal of Physical Chemistry A 126 (17) 2677 (2022)
https://doi.org/10.1021/acs.jpca.2c01050

Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

Jacob W. Smith, Sean M. Seutter and R. Suryanaryanan Iyer
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23 (6) 2340 (2005)
https://doi.org/10.1116/1.2102947