Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall Reactor
J. Phys. IV France, 05 C5 (1995) C5-253-C5-260
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
579 (2025)
https://doi.org/10.1016/B978-0-443-15459-1.00023-1
3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor
Balamurugan Deivendran, Vijay M. Shinde, Harish Kumar and N. Eswara PrasadJournal of Crystal Growth 554 125944 (2021)
https://doi.org/10.1016/j.jcrysgro.2020.125944
Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor
Ö. Danielsson, U. Forsberg, A. Henry and E. JanzénJournal of Crystal Growth 235 (1-4) 352 (2002)
https://doi.org/10.1016/S0022-0248(01)01831-0
Multiplicity of steady states in the codeposition of silicon carbide and carbon
Igor M. Kostjuhin and Stratis V. SotirchosAIChE Journal 48 (12) 2910 (2002)
https://doi.org/10.1002/aic.690481218
In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane
H. Sone, T. Kaneko and N. MiyakawaJournal of Crystal Growth 219 (3) 245 (2000)
https://doi.org/10.1016/S0022-0248(00)00616-3