Low-Temperature Epitaxial Growth Mechanism of Si1-xGex Films in the Silane and Germane Reactions
J. Phys. IV France, 05 C5 (1995) C5-1165-C5-1172
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Segregation and diffusion of phosphorus from doped Si[sub 1−x]Ge[sub x] films into silicon
S. Kobayashi, M. Iizuka, T. Aoki, et al.Journal of Applied Physics 86 (10) 5480 (1999)
https://doi.org/10.1063/1.371549