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Cited article:
T. Mohammed-Brahim , M. Sarret , D. Briand , K. Kis-Sion , O. Bonnaud , A. Hadjaj
J. Phys. IV France, 05 C5 (1995) C5-913-C5-920
This article has been cited by the following article(s):
4 articles
Meyer–Neldel parameter as a figure of merit for quality of thin-film-transistor active layer?
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Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors
L. Pichon, A. Mercha, R. Carin, et al. Solid-State Electronics 46 (4) 459 (2002) https://doi.org/10.1016/S0038-1101(01)00324-0
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
L Pichon, K Mourgues, F Raoult, et al. Semiconductor Science and Technology 16 (11) 918 (2001) https://doi.org/10.1088/0268-1242/16/11/306
Thermal Activation of the Crystallization Kinetics of Amorphous Silicon
T. Mohammed-Brahim, D. Briand, K. Kis-Sion, et al. MRS Proceedings 398 387 (1995) https://doi.org/10.1557/PROC-398-387