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Cited article:

Strained Si_1-xGe_x/Si Dots and Wires Grown by Selective Epitaxy

L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhäuser

J. Phys. IV France, 05 C5 (1995) C5-55-C5-62

DOI: https://doi.org/10.1051/jphyscol:1995503

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This article has been cited by the following article(s):

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

Ignacio Martin-Bragado and Victor Moroz
Applied Physics Letters 98 (15) (2011)
https://doi.org/10.1063/1.3580771

Articles citing this article

Cited article:

Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy

This article has been cited by the following article(s):

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

Strained Si_1-xGe_x/Si Dots and Wires Grown by Selective Epitaxy