A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K
J. Phys. IV France, 12 3 (2002) 113-116
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The Role of the Gate Geometry for Cryogenic HEMTs: Towards an Input Voltage Noise Below $0.5~\mathrm{nV}/\sqrt{\mathrm{Hz}}$ at 1 kHz and 4.2 K
Q. Dong, Y. X. Liang, U. Gennser, A. Cavanna and Y. JinJournal of Low Temperature Physics 167 (5-6) 626 (2012)
https://doi.org/10.1007/s10909-012-0459-0