Articles citing this article

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Cited article:

The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures

F. Dieudonné, J. Jomaah, C. Raynaud, F. Balestra

J. Phys. IV France, 12 3 (2002) 11-14

DOI: https://doi.org/10.1051/jp420020027

PDF (257.4 KB)

This article has been cited by the following article(s):

Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs

François Dieudonné, Sébastien Haendler, Jalal Jomaah and Francis Balestra
Solid-State Electronics 48 (6) 985 (2004)
https://doi.org/10.1016/j.sse.2003.12.025