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Cited article:

Preparation and characterization of HfO₂ thin films by photo-assisted MOCVD

T. Kanashima, T. Tada, M. Okuyama

J. Phys. IV France, 132 (2006) 279-283

Published online: 2006-03-11

DOI: https://doi.org/10.1051/jp4:2006132053

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This article has been cited by the following article(s):

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Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

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PREPARATION AND CHARACTERIZATION OF HAFNIUM SILICATE DIELECTRIC LAYERS BY PHOTO-ASSISTED MOCVD USING MIXED PRECURSOR OF Hf(O-t-C4H9)4 AND Si(O-t-C4H9)4

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