Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices
J. Phys. IV France, 132 (2006) 249-253
Published online: 2006-03-11
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Formation of Porous GaAs by Pulsed Current Electrochemical Anodization: SEM, XRD, Raman, and Photoluminescence Studies
N. K. Ali, M. R. Hashim, A. Abdul Aziz, H. Abu Hassan and J. IsmailElectrochemical and Solid-State Letters 12 (3) K9 (2009)
https://doi.org/10.1149/1.3059005
Observation and control of electrochemical etching effects in the fabrication of InAs∕AlSb∕GaSb heterostructure devices
Ning Su, Yong Tang, Ze Zhang, T. F. Kuech and P. FayJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26 (3) 1025 (2008)
https://doi.org/10.1116/1.2924328