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Cited article:
A. Trampert , T.Y. Liu , O. Brandt , K.H. Ploog
J. Phys. IV France, 132 (2006) 221-224
Published online: 2006-03-11
This article has been cited by the following article(s):
8 articles
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P. Vennéguès, J. M. Chauveau, Z. Bougrioua, et al. Journal of Applied Physics 112 (11) (2012) https://doi.org/10.1063/1.4768686
Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire
Qian Sun, Bo Hyun Kong, Christopher D. Yerino, et al. Journal of Applied Physics 106 (12) (2009) https://doi.org/10.1063/1.3272790
Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
P. Vennéguès, J. M. Chauveau, M. Korytov, et al. Journal of Applied Physics 103 (8) (2008) https://doi.org/10.1063/1.2905220
Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)
Vibhu Jindal, James Grandusky, Neeraj Tripathi, et al. MRS Proceedings 1040 (2007) https://doi.org/10.1557/PROC-1040-Q01-08
Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua, M. Laügt, P. Vennéguès, et al. physica status solidi (a) 204 (1) 282 (2007) https://doi.org/10.1002/pssa.200673585
Interfacial structure of a-plane GaN grown on r-plane sapphire
R. Kröger, T. Paskova, S. Figge, et al. Applied Physics Letters 90 (8) 081918 (2007) https://doi.org/10.1063/1.2696309
Defect structure of a‐plane GaN grown by hydride and metal‐organic vapor phase epitaxy on r‐plane sapphire
R. Kröger, T. Paskova, B. Monemar, et al. physica status solidi c 4 (7) 2564 (2007) https://doi.org/10.1002/pssc.200674909