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Cited article:

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

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Journal of Applied Physics 112 (11) (2012)
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Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

Qian Sun, Bo Hyun Kong, Christopher D. Yerino, et al.
Journal of Applied Physics 106 (12) (2009)
https://doi.org/10.1063/1.3272790

Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

P. Vennéguès, J. M. Chauveau, M. Korytov, et al.
Journal of Applied Physics 103 (8) (2008)
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Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

Vibhu Jindal, James Grandusky, Neeraj Tripathi, et al.
MRS Proceedings 1040 (2007)
https://doi.org/10.1557/PROC-1040-Q01-08

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, et al.
physica status solidi (a) 204 (1) 282 (2007)
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Interfacial structure of a-plane GaN grown on r-plane sapphire

R. Kröger, T. Paskova, S. Figge, et al.
Applied Physics Letters 90 (8) 081918 (2007)
https://doi.org/10.1063/1.2696309

Defect structure of a‐plane GaN grown by hydride and metal‐organic vapor phase epitaxy on r‐plane sapphire

R. Kröger, T. Paskova, B. Monemar, et al.
physica status solidi c 4 (7) 2564 (2007)
https://doi.org/10.1002/pssc.200674909