Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties
J. Phys. IV France, 132 (2006) 133-136
Published online: 2006-03-11
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2core/shell self-organized nanowires
Filippo Fabbri, Francesca Rossi, Giovanni Attolini, et al.Nanotechnology 21 (34) 345702 (2010)
https://doi.org/10.1088/0957-4484/21/34/345702
An O18 study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °C
Catherine Deville Cavellin, Isabelle Trimaille, Jean-Jacques Ganem, et al.Journal of Applied Physics 105 (3) 033501 (2009)
https://doi.org/10.1063/1.3072679
Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide
A. Pongrácz, G. Battistig, Cs. Dücső, K.V. Josepovits and P. DeákMaterials Science and Engineering: C 27 (5-8) 1444 (2007)
https://doi.org/10.1016/j.msec.2006.06.013