Articles citing this article

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Cited article:

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces

M. Akazawa, N. Shiozaki, H. Hasegawa

J. Phys. IV France, 132 (2006) 95-99

Published online: 2006-03-11

DOI: https://doi.org/10.1051/jp4:2006132019

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This article has been cited by the following article(s):

Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates

Daisuke Nakata, Hiromu Shibata, Yuta Shiratori and Seiya Kasai
Japanese Journal of Applied Physics 49 (6) 06GG03 (2010)
https://doi.org/10.1143/JJAP.49.06GG03

In‐situ X‐ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors

Masamichi Akazawa, Hideki Hasegawa and Rui Jia
physica status solidi (a) 204 (4) 1034 (2007)
https://doi.org/10.1002/pssa.200674161