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Cited article:

Thickness-dependent change in the valence band offset of the SiO2/Si interface studied using synchrotron-radiation photoemission spectroscopy

S. Toyoda and M. Oshima
Journal of Applied Physics 120 (8) (2016)
https://doi.org/10.1063/1.4961220

Ultrathin magnetic oxide EuO films on Si(001) using SiOx passivation—Controlled by hard x-ray photoemission spectroscopy

C. Caspers, S. Flade, M. Gorgoi, et al.
Journal of Applied Physics 113 (17) (2013)
https://doi.org/10.1063/1.4795010

Relationship between optical dielectric constant and XPS relative chemical shift of 1sand 2plevels for dielectric compounds

K Hirose, H Suzuki, H Nohira, et al.
Journal of Physics: Conference Series 100 (1) 012011 (2008)
https://doi.org/10.1088/1742-6596/100/1/012011

Correlation between the dipole moment induced at the Slater transition state and the optical dielectric constant of Si and Al compounds

K. Hirose, D. Kobayashi, H. Suzuki and H. Nohira
Applied Physics Letters 93 (19) (2008)
https://doi.org/10.1063/1.2988191

X-ray photoelectron spectroscopy study of dielectric constant for Si compounds

K. Hirose, M. Kihara, D. Kobayashi, et al.
Applied Physics Letters 89 (15) 154103 (2006)
https://doi.org/10.1063/1.2361177