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Cited article:

Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4

Y. Shimamune, M. Sakuraba, T. Matsuura, J. Murota

J. Phys. IV France, 11 PR3 (2001) Pr3-255-Pr3-260

DOI: https://doi.org/10.1051/jp4:2001332

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This article has been cited by the following article(s):

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Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

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Atomic-layer doping in Si by alternately supplied NH3 and SiH4

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Applied Physics Letters 82 (20) 3472 (2003)
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