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Cited article:
T. Matsuwaki , T. Nakajima , K. Yamashita
J. Phys. IV France, 11 PR3 (2001) Pr3-63-Pr3-68
This article has been cited by the following article(s):
5 articles
Suppression of substrate oxidation during ozone based atomic layer deposition of Al2O3: Effect of ozone flow rate
Jinhee Kwon, Min Dai, Mathew D. Halls and Yves. J. Chabal Applied Physics Letters 97 (16) (2010) https://doi.org/10.1063/1.3500821
Xibin Jia, Baocai Yin and Yanfen Sun 1 (2010) https://doi.org/10.1109/ICMULT.2010.5629829
The initial mechanisms of Al2O3 atomic layer deposition on OH/Si(100)-2×1 surface by tri-methylaluminum and water
Manik Kumer Ghosh and Cheol Ho Choi Chemical Physics Letters 426 (4-6) 365 (2006) https://doi.org/10.1016/j.cplett.2006.05.126
Importance of Steric Effects in Cluster Models of Silicon Surface Chemistry: ONIOM Studies of the Atomic Layer Deposition (ALD) of Al2O3 on H/Si(111)
Mathew D. Halls and Krishnan Raghavachari The Journal of Physical Chemistry A 108 (15) 2982 (2004) https://doi.org/10.1021/jp037014m
Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1
Mathew D. Halls and Krishnan Raghavachari The Journal of Chemical Physics 118 (22) 10221 (2003) https://doi.org/10.1063/1.1571513