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Cited article:

Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique

J. Müller, B. Witting, H. Sternkicker, S. Bendix

J. Phys. IV France, 11 PR3 (2001) Pr3-17-Pr3-22

DOI: https://doi.org/10.1051/jp4:2001302

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This article has been cited by the following article(s):

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Polyhedron 27 (6) 1832 (2008)
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Chemistry in low-temperature matrices

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Annual Reports Section "C" (Physical Chemistry) 103 79 (2007)
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Theoretical Investigation of the Gas‐Phase Decomposition of Ga(N3)2Et as a Model for a Single‐Molecule GaN Precursor

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Chemical Vapor Deposition 9 (5) 272 (2003)
https://doi.org/10.1002/cvde.200306255