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Cited article:

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

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physica status solidi (b) 254 (8) (2017)
https://doi.org/10.1002/pssb.201600737

The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities

Simon Aldridge, Anthony J. Downs and Deborah L. Kays
The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities 148 (2011)
https://doi.org/10.1002/9780470976548.ch3

Ein Mehrskalenansatz zur numerischen Simulation und Analyse der metallorganischen Gasphasenepitaxie

G. Brenner, M. Mukinovic, E. Mesic, et al.
Chemie Ingenieur Technik 78 (6) 679 (2006)
https://doi.org/10.1002/cite.200500166

Theoretical Investigation of the Gas‐Phase Decomposition of Ga(N3)2Et as a Model for a Single‐Molecule GaN Precursor

B. Wolbank and R. Schmid
Chemical Vapor Deposition 9 (5) 272 (2003)
https://doi.org/10.1002/cvde.200306255

Growth kinetics of GaN thin films grown by OMVPE using single source precursors

R. A. Fischer, A. Wohlfart, A. Devi and W. Rogge
MRS Internet Journal of Nitride Semiconductor Research 5 (S1) 152 (2000)
https://doi.org/10.1557/S109257830000421X