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Cited article:

Amorphous SiGe deposition by LPCVD from Si₂H₆ and GeH₄ precursors

J. Olivares, J. Sangrador, A. Rodríguez, T. Rodríguez

J. Phys. IV France, 09 PR8 (1999) Pr8-321-Pr8-325

DOI: https://doi.org/10.1051/jp4:1999839

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Influence of The Alloy Composition on The Thermodynamic Parameters of Nucleation and Growth of SiGe

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