Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine

Konstantina Christina Topka, Hugues Vergnes, Tryfon Tsiros, et al.
Chemical Engineering Journal 431 133350 (2022)
https://doi.org/10.1016/j.cej.2021.133350

Effect of Reduced Pressure on 3C‐SiC Heteroepitaxial Growth on Si by CVD

Y. Ishida, T. Takahashi, H. Okumura, K. Arai and S. Yoshida
Chemical Vapor Deposition 12 (8-9) 495 (2006)
https://doi.org/10.1002/cvde.200506464

Single-Source CVD of 3C-SiC Films in a LPCVD Reactor

Gianluca Valente, Muthu B. J. Wijesundara, Roya Maboudian and Carlo Carraro
Journal of The Electrochemical Society 151 (3) C215 (2004)
https://doi.org/10.1149/1.1646142

Classical and Dynamic Analysis of Gas Phase Reactivity

Stéphanie de Persis, Francis Teyssandier, Dominique Thévenin and Nasser Darabiha
Journal of The Electrochemical Society 151 (4) C236 (2004)
https://doi.org/10.1149/1.1648022

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Jérôme Meziere, Michel Pons, Léa Di Cioccio, et al.
Journal of Physics: Condensed Matter 16 (17) S1579 (2004)
https://doi.org/10.1088/0953-8984/16/17/009

Simulation of SiC deposition from SiH4/C3H8/Ar/H2 mixtures in a cold-wall CVD reactor

A. Dollet, S. de Persis, M. Pons and M. Matecki
Surface and Coatings Technology 177-178 382 (2004)
https://doi.org/10.1016/j.surfcoat.2003.09.032

Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping

Jérôme Mézière, Elisabeth Blanquet, Michel Pons, et al.
MRS Proceedings 742 (2002)
https://doi.org/10.1557/PROC-742-K1.4

Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD

Michel Pons, Jerome Mezière, Jean Marc Dedulle, et al.
MRS Proceedings 640 H5.6 (2000)
https://doi.org/10.1557/PROC-640-H5.6