Nucleation behavior during the first stages of SiC growth on different substrates
J. Phys. IV France, 09 PR8 (1999) Pr8-1069-Pr8-1074
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Residual stress and texture in poly-SiC films grown by low-pressure organometallic chemical-vapor deposition
E. Hurtós and J. Rodrı́guez-ViejoJournal of Applied Physics 87 (4) 1748 (2000)
https://doi.org/10.1063/1.372087