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Cited article:

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

Botao Song, Bing Gao, Pengfei Han and Yue Yu
Materials 15 (11) 3768 (2022)
https://doi.org/10.3390/ma15113768

Multi-Scale Analysis and Elementary Reaction Simulation of SiC-CVD Using CH3SiCl3/H2

Yasuyuki Fukushima, Noboru Sato, Yuichi Funato, et al.
ECS Journal of Solid State Science and Technology 2 (11) P492 (2013)
https://doi.org/10.1149/2.039311jss

Understanding the CVD process of (Si)–B–C ceramics through FTIR spectroscopy gas phase analysis

J. Berjonneau, F. Langlais and G. Chollon
Surface and Coatings Technology 201 (16-17) 7273 (2007)
https://doi.org/10.1016/j.surfcoat.2007.01.039