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Cited article:

HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization

Y. Jin

J. Phys. IV France, 08 PR3 (1998) Pr3-131-Pr3-134

DOI: https://doi.org/10.1051/jp4:1998330

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Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

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