Articles citing this article

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Cited article:

Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures

J.M. Roldán, J.D. Cressler, G. Niu, S.D. Clark, D. Nguyen-Ngoc

J. Phys. IV France, 08 PR3 (1998) Pr3-99-Pr3-102

DOI: https://doi.org/10.1051/jp4:1998323

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This article has been cited by the following article(s):

Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Jeffrey W. Teng, Delgermaa Nergui, George N. Tzintzarov, Brett L. Ringel, Zachary R. Brumbach, Justin P. Heimerl, Yaw A. Mensah, Jackson P. Moody, Dennis O. Thorbourn, Linda Del Castillo, Mohammad M. Mojarradi, Benjamin J. Blalock and John D. Cressler
IEEE Transactions on Nuclear Science 70 (4) 611 (2023)
https://doi.org/10.1109/TNS.2022.3226452

An investigation of the spatial location of proton-induced traps in SiGe HBTs

J.M. Roldan, Guofu Niu, W.E. Ansley, et al.
IEEE Transactions on Nuclear Science 45 (6) 2424 (1998)
https://doi.org/10.1109/23.736481