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Cited article:

Invited PaperComparison of the freeze-out effect in ln and B doped n-MOSFETs in the range 4.2 – 300 K

I. Alawneh, E. Simoen, S. Biesemans, K. De Meyer, C. Claeys

J. Phys. IV France, 08 PR3 (1998) Pr3-3-Pr3-8

DOI: https://doi.org/10.1051/jp4:1998301

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This article has been cited by the following article(s):

Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

V. S. Lysenko, I. P. Tyagulski, I. N. Osiyuk and Y. V. Gomeniuk
Perspectives, Science and Technologies for Novel Silicon on Insulator Devices 307 (2000)
https://doi.org/10.1007/978-94-011-4261-8_29