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Initial oxide/SiC interface formation on C-terminated β-SiC(100) c(2×2) and graphitic C-rich β-SiC(100) 1×1 surfaces
M. G. Silly, J. Roy, H. Enriquez, et al. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22(4) 2226 (2004) https://doi.org/10.1116/1.1768532
Experimental and theoretical electronic structure determination of theβ−SiC(001)c(4×2)surface reconstruction
Oxynitridation of cubic silicon carbide (100) surfaces
F. Amy, L. Douillard, V. Yu. Aristov and P. Soukiassian Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17(5) 2629 (1999) https://doi.org/10.1116/1.581922
Core-level photoemission spectroscopy of the β-SiC(100) c(4×2) surface