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Cited article:

Strain-Induced Atomic Rearrangements in Ge Overlayers on Si(001)

H. Oyanagi, K. Sakamoto, R. Shioda

J. Phys. IV France, 7 C2 (1997) C2-669-C2-673

DOI: https://doi.org/10.1051/jp4:1997201

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This article has been cited by the following article(s):

Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix

S.B. Erenburg, N.V. Bausk, N.P. Stepina, et al.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 470 (1-2) 283 (2001)
https://doi.org/10.1016/S0168-9002(01)01080-4

Local structure of self-organized uniform Ge quantum dots on Si(001)

S.B Erenburg, N.V Bausk, L.N Mazalov, et al.
Solid State Ionics 141-142 135 (2001)
https://doi.org/10.1016/S0167-2738(01)00733-0