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Cited article:

Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview

F. Aniel, A. Sylvestre, Y. Jin, P. Crozat, A. de Lustrac, R. Adde

J. Phys. IV France, 06 C3 (1996) C3-145-C3-149

DOI: https://doi.org/10.1051/jp4:1996322

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This article has been cited by the following article(s):

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Device and Circuit Cryogenic Operation for Low Temperature Electronics

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Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

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