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Cited article:

The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

S.L. Salmon, J.D. Cressler, R.C. Jaeger and D.L. Harame
IEEE Transactions on Electron Devices 47 (2) 292 (2000)
https://doi.org/10.1109/16.822270