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Cited article:

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

P. Galy, J. Camirand Lemyre, P. Lemieux, et al.
IEEE Journal of the Electron Devices Society 6 594 (2018)
https://doi.org/10.1109/JEDS.2018.2828465

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

A. Karsenty and A. Chelly
Active and Passive Electronic Components 2014 1 (2014)
https://doi.org/10.1155/2014/697369

Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature

E. Simoen and C. Claeys
IEEE Transactions on Electron Devices 48 (6) 1207 (2001)
https://doi.org/10.1109/16.925249

Low-noise integrated SQUID electronics operating in liquid nitrogen

V. Zakosarenko, J. Kunert, V. Schultze, et al.
IEEE Transactions on Appiled Superconductivity 9 (2) 3283 (1999)
https://doi.org/10.1109/77.783730