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Cited article:

Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation

B. Fischer, L. Selmi, A. Ghetti, E. Sangiorgi

J. Phys. IV France, 06 C3 (1996) C3-19-C3-24

DOI: https://doi.org/10.1051/jp4:1996303

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This article has been cited by the following article(s):

Theory of Transport Properties of Semiconductor Nanostructures

C. Jacoboni, R. Brunetti and P. Bordone
Theory of Transport Properties of Semiconductor Nanostructures 59 (1998)
https://doi.org/10.1007/978-1-4615-5807-1_3