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Cited article:

Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs

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https://doi.org/10.7567/JJAP.54.100301

Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

A. Karsenty and A. Chelly
Active and Passive Electronic Components 2014 1 (2014)
https://doi.org/10.1155/2014/782417

Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique

Po Chin Huang, San Lein Wu, Shoou Jinn Chang, et al.
IEEE Electron Device Letters 32 (7) 835 (2011)
https://doi.org/10.1109/LED.2011.2140350

Temperature dependence of silicon power MOSFETs switching parameters

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Microelectronics International 23 (2) 21 (2006)
https://doi.org/10.1108/13565360610659662

Temperature dependence of a silicon power device switching parameters

R. Habchi, C. Salame, A. Khoury and P. Mialhe
Applied Physics Letters 88 (15) 153503 (2006)
https://doi.org/10.1063/1.2194007

Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

V. Gaspari, K. Fobelets, J.E. Velazquez-Perez, et al.
Applied Surface Science 224 (1-4) 390 (2004)
https://doi.org/10.1016/j.apsusc.2003.08.066

Characterization of Silicon-on-Sapphire Material and Devices for Radio Frequency Applications

D. Munteanu, S. Cristoloveanu, O. Rozeau, et al.
Journal of The Electrochemical Society 148 (4) G218 (2001)
https://doi.org/10.1149/1.1355693