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Cited article:

Low temperature low voltage operation of HEMTs on InP

A. Sylvestre, P. Crozat, R. Adde, A. De Lustrac, Y. Jin

J. Phys. IV France, 04 C6 (1994) C6-153-C6-158

DOI: https://doi.org/10.1051/jp4:1994624

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This article has been cited by the following article(s):

Cryogenic InP HEMTs With Enhanced f max and Reduced On-Resistance Using Double Recess

Yuxuan Chen, Fugui Zhou, Yongheng Gong, Yongbo Su, Wuchang Ding, Jingyuan Shi, Peng Ding and Zhi Jin
IEEE Journal of the Electron Devices Society 13 366 (2025)
https://doi.org/10.1109/JEDS.2025.3557432

Device and Circuit Cryogenic Operation for Low Temperature Electronics

Frédéric Aniel and Robert Adde
Device and Circuit Cryogenic Operation for Low Temperature Electronics 85 (2001)
https://doi.org/10.1007/978-1-4757-3318-1_5