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Cited article:

Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures

Markus Kantner and Thomas Koprucki
Optical and Quantum Electronics 48 (12) (2016)
https://doi.org/10.1007/s11082-016-0817-2

The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

S.L. Salmon, J.D. Cressler, R.C. Jaeger and D.L. Harame
IEEE Transactions on Electron Devices 47 (2) 292 (2000)
https://doi.org/10.1109/16.822270

Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors

A.J. Joseph, J.D. Cressler, D.M. Richey, R.C. Jaeger and D.L. Harame
IEEE Transactions on Electron Devices 44 (3) 404 (1997)
https://doi.org/10.1109/16.556150

Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures

D.M. Richey, A.J. Joseph, J.D. Cressler and R.C. Jaeger
Solid-State Electronics 39 (6) 785 (1996)
https://doi.org/10.1016/0038-1101(95)00223-5

Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime

A.J. Joseph, J.D. Cressler and D.M. Richey
IEEE Electron Device Letters 16 (6) 268 (1995)
https://doi.org/10.1109/55.790731