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Cited article:

High-injection barrier effects in SiGe HBTs operating at cryogenic temperatures

J.D. Cressler, D.M. Richey, R.C. Jaeger, E.F. Crabbé, J.H. Comfort, J.M.C. Stork

J. Phys. IV France, 04 C6 (1994) C6-117-C6-122

DOI: https://doi.org/10.1051/jp4:1994618

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This article has been cited by the following article(s):

An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

Jiahui Yuan, John D. Cressler, Chendong Zhu, et al.
IEEE Transactions on Electron Devices 54 (3) 504 (2007)
https://doi.org/10.1109/TED.2006.890392

Optimization of SiGe HBTs for operation at high current densities

A.J. Joseph, J.D. Cressler, D.M. Richey and G. Niu
IEEE Transactions on Electron Devices 46 (7) 1347 (1999)
https://doi.org/10.1109/16.772475